Мақаланы E-mail арқылы жіберу Interface electronic states contribution into terahertz photoconductivity in structures based on Hg1 – xCdxTe with inverted energy spectrum
- Авторлар: Kazakov A.S.1, Ryabova L.I.2, Danilov S.N.3, Bannikov M.I.4, Mikhailov N.N.5, Dvoretskiy S.A.5, Chmyr S.N.1, Ikonnikov A.V.1, Artamkin A.I.1, Galeeva A.V.1, Khokhlov D.R.1,4
-
Мекемелер:
- Lomonosov Moscow State University, Physics Department
- Lomonosov Moscow State University, Chemistry Department
- University of Regensburg
- Lebedev Physical Institute of the Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Шығарылым: Том 87, № 6 (2023)
- Беттер: 843-848
- Бөлім: Articles
- URL: https://permmedjournal.ru/0367-6765/article/view/654383
- DOI: https://doi.org/10.31857/S0367676523701466
- EDN: https://elibrary.ru/VLVPZT
- ID: 654383
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We show the differences in the necessarily formed electronic states at the boundaries of the topological phase with a vacuum and with a trivial buffer in the regions of heterojunction in topological materials based on epitaxial films Hg1 – xCdxTe. It was demonstrated that the PT-symmetric terahertz photoconductivity observed in these structures is due precisely to the states in the region of the topological film/trivial buffer (or cap-layer) interfaces.
Авторлар туралы
A. Kazakov
Lomonosov Moscow State University, Physics Department
Хат алмасуға жауапты Автор.
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
L. Ryabova
Lomonosov Moscow State University, Chemistry Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
S. Danilov
University of Regensburg
Email: askazakov@physics.msu.ru
Germany, D-93053 , Regensburg
M. Bannikov
Lebedev Physical Institute of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
N. Mikhailov
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 630090, Novosibirsk
S. Dvoretskiy
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 630090, Novosibirsk
S. Chmyr
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. Ikonnikov
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. Artamkin
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. Galeeva
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
D. Khokhlov
Lomonosov Moscow State University, Physics Department; Lebedev Physical Institute of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow; Russia, 119991, Moscow
Әдебиет тізімі
- Hasan M.Z., Kane C.L. // Rev. Mod. Phys. 2010. V. 82. P. 3045.
- Волков Б.А., Панкратов О.А. // Письма в ЖЭТФ. 1985. Т. 42. № 4. С. 145; Volkov B.A., Pankratov O.A.// JETP Lett. 1985. V. 42. No. 4. P. 145.
- Volkov B.A., Pakhomov S.V., Pankratov O.A. // Solid State Commun. 1987. V. 61. No. 2. P. 93.
- Brüne C., Liu C.X., Novik E.G. et al. // Phys. Rev. Lett. 2011. V. 106. Art. No. 126803.
- Liu C., Bian G., Chang T.R. et al. // Phys. Rev. B. 2015. V. 92. Art. No. 115436.
- Rogalski A. // Rep. Prog. Phys. 2005. V. 68. P. 2267.
- Weiler M. Semiconductors and semimetals. New York: Academic press, 1981. P. 119.
- Orlita M., Basko D.M., Zholudev M.S. et al. // Nature Physics. 2014. V. 10. P. 233.
- Teppe F., Marcinkiewicz M., Krishtopenko S.S. et al. // Nature Commun. 2016. V. 7. Art. No. 12576.
- Dvoretsky S., Mikhailov N., Sidorov Y. et al. // J. Electron. Mater. 2010. V. 39. P. 918.
- Varavin V.S., Dvoretsky S.A., Liberman V.I. et al. // J. Cryst. Growth. 1996. V. 159. P. 1161.
- Ruffenach S., Kadykov A., Rumyantsev V.V. et al. // APL Materials. 2017. V. 5. No. 3. Art. No. 035503.
- Kvon Z.D., Danilov S.N., Mikhailov N.N. et al. // Physica E. 2008. V. 40. No. 6. P. 1885.
- Savchenko M.L., Otteneder M., Dmitriev I.A. et al. // Appl. Phys. Lett. 2020. V. 117. Art. No. 201103.
- Ярошевич А.С., Квон З.Д., Гусев Г.М., Михайлов Н.Н. // Письма в ЖЭТФ. 2020. Т. 111. № 2. С. 107; Yaroshevich A.S., Kvon Z.D., Gusev G.M., Mikhailov N.N. // JETP Lett. 2020. V. 111. No. 2. P. 121.
- Галеева А.В., Артамкин А.И., Михайлов Н.Н. и др. // Письма в ЖЭТФ. 2017. Т. 106. № 3. С. 156; Galeeva A.V., Artamkin A.I., Mikhailov N.N. et al. // JETP Lett. 2017. V. 106. P. 162.
- Galeeva A.V., Artamkin A.I., Kazakov A.S. et al. // Beilsten J. Nanotechnol. 2018. V. 9. P. 1035.
- Galeeva A.V., Kazakov A.S. Artamkin A.I. et al. // Sci. Reports. 2020. V. 10. P. 2377.
- Ганичев С.Д., Емельянов С.А., Ярошецкий И.Д. // Письма ЖЭТФ. 1982. Т. 35. № 7. С. 297; Ganichev S.D., Emel’yanov S.A., Yaroshetskii I.D. // JETP Lett. 1982. V. 35. P. 368.
- Bel’kov V.V. Ganichev S.D., Schneider P. et al. // Solid. State. Commun. 2003. V. 128. P. 283.
- Kazakov A.S., Galeeva A.V., Artamkin A.I. et al. // Sci. Reports. 2021. V. 11. P. 1587.
Қосымша файлдар
