Multimode light generation in an injection semiconductor laser based on a chiral AlAs/(Al, Ga)As/GaAs microcavity

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Аннотация

Experimental investigations of chiral injection AlAs/(Al, Ga)As/GaAs vertical-cavity surface-emitting lasers in the multimode generation regime are performed. A high circular polarization degree > 70% of different generation modes measured with a high spectral resolution, is demonstrated. Detailed maps of spatial and angular distribution of laser radiation intensity were constructed.

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Авторлар туралы

A. Maksimov

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: maksimov@issp.ac.ru
Ресей, Chernogolovka

I. Tartakovsky

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: maksimov@issp.ac.ru
Ресей, Chernogolovka

Әдебиет тізімі

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2. Fig. 1. Emission spectra of the laser structure at different circular polarisation in the developed generation mode at the value of the pulse current flowing through the sample J ≈ 25 mA; temperature T = 1.8 K. Solid curve - spectrum of radiation in σ+ circular polarisation, dotted curve - in σ-; dotted curve - degree of circular polarisation ρC

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3. Fig. 2. Spatial intensity distribution of the I mode of laser generation with radiation energy ~1564.62 meV in σ+ and σ- circular polarisations from different parts of the laser surface

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4. Fig. 3. Dependences of the intensity distribution of I + and I - modes with radiation energy ~1564.62 meV in σ+ and σ- circular polarisations, respectively, on the angle of radiation output with respect to the normal to the sample surface along the x and y directions in space

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5. Fig. 4. Angular dependence of the intensity of the laser generation mode I along the spatial direction x (ky ≈ 0) in two circular polarisations σ+ (closed symbols) and σ- (open symbols)

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