Author Details

Efremov, A. M.

Issue	Section	Title	File
Vol 53, No 1 (2024)	ТЕХНОЛОГИИ	Parameters and Composition of Plasma in a Mixture of CF₄ + H₂ + Ar: Effect of the CF₄/H₂ Ratio
Vol 52, No 5 (2023)	ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ	The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
Vol 52, No 4 (2023)	ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ	Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
Vol 52, No 2 (2023)	ТЕХНОЛОГИЯ	Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture
Vol 52, No 1 (2023)	ДИАГНОСТИКА	Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Vol 53, No 6 (2024)	ДИАГНОСТИКА	Gas Phase Composition and Fluorine Atom Kinetics in SF₆ Plasma
Vol 53, No 6 (2024)	ТЕХНОЛОГИИ	Plasma Parameters and Si/SiO₂ Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium