Peculiarities of the formation of Dy/Co periodic multilayer systems upon magnetron sputtering

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X-ray and magnetometry methods are used to show that, during magnetron sputtering of Dy/Co periodic multilayer systems, the DyCo2 and DyCo3 intermetallics form. The main reason for the phase formation of various intermetallics is the structural state of buffer layer, namely, its crystalline and amorphous state in the case of crystalline and glass substrate, respectively.

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作者简介

G. Prutskov

National Research Center “Kurchatov Institute”

Email: makarova@imp.uran.ru
俄罗斯联邦, Moscow, 123182

I. Subbotin

National Research Center “Kurchatov Institute”

Email: makarova@imp.uran.ru
俄罗斯联邦, Moscow, 123182

E. Kravtsov

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University named after the First President of Russia B. N. Yeltsin

Email: makarova@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108; Ekaterinburg, 620002

M. Makarova

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University named after the First President of Russia B. N. Yeltsin

编辑信件的主要联系方式.
Email: makarova@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108; Ekaterinburg, 620002

M. Milyaev

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University named after the First President of Russia B. N. Yeltsin

Email: makarova@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108; Ekaterinburg, 620002

E. Pashaev

National Research Center “Kurchatov Institute”

Email: makarova@imp.uran.ru
俄罗斯联邦, Moscow, 123182

参考

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2. Fig. 1. Theoretical (solid) and experimental (dots) reflectometry curves for sample A and the residual curve σ. The inset shows a fragment of the curve in the range of 2.35–2.40 degrees.

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3. Fig. 2. Theoretical (solid) and experimental (dots) reflectometry curves for sample B and the residual curve σ. The inset shows a fragment of the curve in the range of 2.51–2.64 degrees.

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4. Fig. 3. Distribution profile of the real part of polarizability by depth for samples A (crystalline substrate) and B (amorphous substrate).

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5. Fig. 4. Distribution profile of the real part of polarizability within one period. The dashed lines indicate the values ​​of the real part of polarizability for pure elements Dy, Co and the average value of the real part of polarizability for the Dy 2 nm/Co 3 nm system.

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6. Fig. 5. Diffraction curves from samples A (crystalline substrate) and B (amorphous substrate) in 2θ-θ geometry.

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7. Fig. 6. Diffraction curves from samples A and B in the glancing reflection geometry at ω = 1°. The lines on the abscissa axis correspond to bulk Dy and Co.

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8. Fig. 7. Hysteresis loops for sample A with a crystalline Si substrate at different temperatures in a magnetic field directed perpendicular to the plane of the sample.

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9. Fig. 8. Hysteresis loops for sample B with a substrate made of amorphous glass SiO2 at different temperatures in a magnetic field directed perpendicular to the plane of the sample.

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