Efficiency of sub-THz – DC energy conversion of a silicon detector
- Авторлар: Shchepetilnikov A.V.1, Khisameeva A.R.1, Fedotova Y.V.1, Dryomin A.A.1, Kukushkin I.V.1
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Мекемелер:
- Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
- Шығарылым: Том 88, № 2 (2024)
- Беттер: 180-184
- Бөлім: New Materials and Technologies for Security Systems
- URL: https://permmedjournal.ru/0367-6765/article/view/654746
- DOI: https://doi.org/10.31857/S0367676524020025
- EDN: https://elibrary.ru/RTWKBX
- ID: 654746
Дәйексөз келтіру
Аннотация
The efficiency of sub-THz to DC energy conversion of a silicon-based plasmonic detector was studied. The dependence of the signal at the detector output on the incident radiation power was measured. In the power linear region, the coefficient η was shown to grow with increasing power and to saturate in the sub-linear regime. The maximum achieved values of η were 0.4% for the radiation frequency of 97 GHz. The measurements were carried out both at room temperature and when the detector was cooled to liquid nitrogen temperature.
Толық мәтін

Авторлар туралы
A. Shchepetilnikov
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: shchepetilnikov@issp.ac.ru
Ресей, Chernogolovka
A. Khisameeva
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Ресей, Chernogolovka
Ya. Fedotova
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Ресей, Chernogolovka
A. Dryomin
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Ресей, Chernogolovka
I. Kukushkin
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Ресей, Chernogolovka
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