Investigation of double patterning method with the usage of antispacer

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

In this paper we review double lithography method with the usage of antispacer, which allows to form structures of critical layers with sub-193i lithographic dimensions that go beyond the single extreme ultraviolet lithography limits. We present a set of key parameters affecting the process productivity and a method for optimizing the lithographic process.

Толық мәтін

Рұқсат жабық

Авторлар туралы

E. Tikhonova

JSC “MERI”

Хат алмасуға жауапты Автор.
Email: etikhonova@niime.ru
Ресей, Moscow

E. Gornev

JSC “MERI”

Email: egornev@niime.ru
Ресей, Moscow

Әдебиет тізімі

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Әрекет
1. JATS XML
Жүктеу
2. Fig. 1. Roadmap for the development of the lithographic process technology depending on the critical steps: metallization and gate [3]

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3. Fig. 2. Comparison of the normalized price of the lithography operation per plate depending on the technological standard [4]

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4. Fig. 3. Technological routes of the methods: self-aligned double lithography (SAL) using a spacer (left) and double lithography (DL) using an antispacer (right) [7, 9]

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5. Fig. 4. Key parameters for improving and optimizing the stages of the DL process with an antispacer

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© Russian Academy of Sciences, 2025