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Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He
Ефремов А., Kwon K.
Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана
Мурин Д., Пивоваренок С., Чесноков И., Гогулев И.
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Murin D., Chesnokov I., Pivovarenok S., Efremov A.
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures
Efremov A., Bobylev A., Kwon K.
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma
Efremov A., Smirnov S., Betelin V.
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio
Miakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium
Efremov A., Betelin V., Kwon K.
Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma
Murin D., Grazhdyan A., Chesnokov I., Gogulev I.
Gas Phase Composition and Fluorine Atom Kinetics in SF6 Plasma
Myakonkikh A., Kuzmenko V., Efremov A., Rudenko K.
Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium
Murin D., Chesnokov I., Gogulev I., Anokhin A., Moloskin A.
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