AZ nLOF series photoresist films on monocrystalline silicon

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Аннотация

Films of negative photoresists (FR) AZ nLOF 2020, AZ nLOF 2070 and AZ nLOF 5510 with a thickness of 0.99–6.0 microns deposited on the surface of silicon wafers by centrifugation have been studied by the methods of microindentation and IR Fourier spectroscopy using a diffuse reflection module. It has been established that FR films behave like elastoplastic materials in which tensile elastic stresses are present. The most intense in the reflective absorption spectra of AZ nLOF photoresistive films are bands of valence vibrations of the aromatic ring (≈ 1500 cm–1), pulsation vibrations of the aromatic ring carbon skeleton (double maximum ≈ 1595 and 1610 cm–1), a wide structured band with several maxima in the range of 1050–1270 cm–1 and a band with a maximum of ≈ 1430 cm–1 due to vibrations of the benzene ring, associated with the CH2 bridge. It is shown that the line corresponding to the vibrations of the CH3 groups with a maximum at 2945 cm–1 is caused by the solvent. The differences in the FR spectra of AZ nLOF 2020 and AZ nLOF 2070 are associated with the presence of a residual solvent in the films and the interaction of its molecules with the aromatic rings of the main FR component – phenol-formaldehyde.

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Авторлар туралы

D. Brinkevich

Belarusian State University

Хат алмасуға жауапты Автор.
Email: brinkevich@bsu.by
Белоруссия, Minsk

E. Grinyuk

Belarusian State University

Email: brinkevich@bsu.by
Белоруссия, Minsk

V. Prosolovich

Belarusian State University

Email: prosoloch@bsu.by
Белоруссия, Minsk

O. Zubova

JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company

Email: brinkevich@bsu.by
Белоруссия, Minsk

V. Kolos

JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company

Email: brinkevich@bsu.by
Белоруссия, Minsk

S. Brinkevich

LLC “My Medical Center – High Technologies”

Email: brinkevich@bsu.by
Ресей, Leningrad region

S. Vabishchevich

Polotsk State University

Email: brinkevich@bsu.by
Белоруссия, Novopolotsk

Әдебиет тізімі

  1. AZ nLOF 20xx negative resist // www.microchemicals.com/products/photoresists
  2. Brinkevich D.I., Kharchenko A.A., Prosolovich V.S., Odzhaev V.B., Brinkevich S.D., Yankovski Yu.N. Reflection spectra modification of diazoquinone-novolak photoresist implanted with B and P ions // Russian Microelectronics. 2019. V. 48. No 3. P. 197–201. https://doi.org/10.1134/S1063739719020021
  3. Poljansek I., Sebenik U., Krajnc M. Characterization of phenol-urea-formaldehyde resin by inline FTIR spectroscopy// Journal of Applied Polymer Science. 2006. V. 99. No 5. P. 2016–2028. https://doi.org/10.1002/app.22161
  4. Brinkevich S.D., Brinkevich D.I., Prosolovich V.S., Lastovskii S.B., Pyatlitski A.N. Frustrated total internal reflection spectra of diazoquinone-novolac photoresist films // Journal of Applied Spectroscopy. 2021. V. 87. No 6 P. 1072–1078. https://doi.org/10.1007/s10812-021-01111-9
  5. Brinkevich D.I., Grinyuk E.V., Brinkevich S.D., Prosolovich V.S., Kolos V.V., Zubova O.A., Lastovskii S.B. Fourier-IR spectroscopy of photoresist/silicon structures for explosive lithography // Journal of Applied Spectroscopy. 2024. V. 90. No 6. P. 1223–1228. https://doi.org/10.1007/s10812-024-01657-4
  6. Brinkevich S.D., Grinyuk E.V., Brinkevich D.I., Prosolovich V.S. Modification of Diazoquinone–Novolac Photoresist Films beyond the Region of Implantation of В+ Ions // High energy chemistry. 2020. V. 54. No 5. P. 342–351. https://doi.org/10.1134/S0018143920050045
  7. Garcia I.T.S., Zawislak F.C., Samios D. The effects of nuclear and electronic stopping powers on ion irradiated novolac–diazoquinone films // Applied Surface Science. 2004. V. 228. No 1–4. P. 63–76. https://doi.org/10.1016/j.apsusc.2003.12.027
  8. Tarasevich B.N. IK spektry osnovnyh klassov organicheskih soedinenij. Spravochnye materialy. Moscow: MGU. 2012. 55 p. (In Russ.).
  9. Brinkevich D.I., Brinkevich S.D., Petlitsky A.N., Prosolovich V.S. Transformation of the Spectra of a Attenuated Total Reflection when Drying a Diazoquinone-Novolach Photoresist // Russian Microelectronics. 2021. V. 50. No 4. Р. 239–245. https://doi.org/10.1134/S106373972104003X
  10. Odzhaev V.B., Pyatlitski A.N., Prosolovich V.S., Kovalchuk N.S., Soloviev Ya.A., Zhygulin D.V., Shestovsky D.V., Yankovski Yu.N., Brinkevich D.I. Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures // Journal of Applied Spectroscopy. 2022. V. 89. No 4. P. 665–670. https://doi.org/10.1007/s10812-022-01408-3
  11. Pretsch E., Bühlmann P., Affolter C. Structure Determination of Organic Compounds, Berlin: Springer, 2000.
  12. Brinkevich S.D., Brinkevich D.I., Prosolovich V.S., Sverdlov R.L. Radiation-Induced Processes in Diazoquinone–Novolac Resist Films under Irradiation with Со60 γ-Rays // High Energy Chemistry. 2021. V. 55. No 1. P. 65–74. https://doi.org/10.1134/S0018143921010070
  13. Brinkevich D.I., Prasalovich U.S., Yankovski Yu.N. Modification of diazoquinone-novolac photoresist films by boron ion implantation // Journal of the Belarusian State University. Physics. 2020. No 2. P. 62–69. (In Russ., abstr. in Engl.). https://doi.org/10.33581/2520-2243-2020-2-62-69
  14. Brinkevich D.I., Prosolovich V.S., Kolos V.V., Zubova O.A., Vabishchevich S.A. Infrared Fourier spectroscopy of diffuse reflection of the AZ nLOF series negative photoresists films on monocrystalline silicon // Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental’nye nauki (In Russ., abstr. in Engl.). 2024. No 2(43). P. 34–40. https://doi.org/10.52928/2070-1624-2024-43-2-34-40

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2. Fig. 1. Structural formula of propylene glycol monomethyl ether acetate (PGMEA)

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3. Fig. 2. Reflectance-absorption spectra of AZ nLOF2020 photoresist films with a thickness of 6.0 μm (1) and AZ nLOF2070 with a thickness of 5.85 μm (2)

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4. Fig. 3. Reflectance-absorption spectrum of AZ nLOF5510 negative photoresist films with a thickness of 0.99 µm

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5. Fig. 4. Reflectance-absorption spectra in the region of aromatic ring vibrations of AZ nLOF2070 (2) photoresist films with a thickness of 5.85 μm and AZ nLOF2020 (1) with a thickness of 6.0 μm

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6. Fig. 5. Reflectance-absorption spectra of AZ nLOF5510 photoresist films with a thickness of 0.99 μm (1) and AZ nLOF2020 with a thickness of 6.0 μm (2) in the region of stretching vibrations of double C=O (a) and C–H (b) bonds

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7. Fig. 6. Reflectance-absorption spectra of AZ nLOF5510 photoresist films with a thickness of 0.99 μm (1) and AZ nLOF2020 with a thickness of 6.0 μm (2) in the region of stretching vibrations of single C-O and C-C bonds (a) and vibrations of the aromatic ring (b)

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