Oxidation and Etching of Thin Ruthenium Films in Low Ion Energy Oxygen Plasma

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It has been established by X-ray photoelectron spectroscopy that the oxidation of thin ruthenium films in oxygen plasma with the addition of 5% inert gases (Ar or Kr) occurs with the formation of an oxide layer of RuO2. With an increase in ion energy from 20 to 140 eV, the oxygen content in the near-surface layer was found to increase from 60 to 70 at. %. The Ru etching rate also increased several times. Such a symbate dependence is explained by the fact that ion bombardment of the surface stimulates not only the removal of weakly bound metal oxides on the surface, but also accelerates their formation on the surface. The limiting stage of etching is the removal of non-volatile metal oxides. The shift of the Ru3d doublet peaks, the change in their relative intensity depending on the ion energy, as well as the presence of an oxygen-enriched layer on the RuO2 surface indicate the possibility of the formation of RuO3 oxide on the surface during plasma treatment.

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作者简介

I. Amirov

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

编辑信件的主要联系方式.
Email: ildamirov@yandex.ru
俄罗斯联邦, Yaroslavl, 150067

N. Alov

Lomonosov Moscow State University

Email: ildamirov@yandex.ru
俄罗斯联邦, Moscow, 119991

P. Sharanov

Lomonosov Moscow State University

Email: ildamirov@yandex.ru
俄罗斯联邦, Moscow, 119991

T. Rakhimova

Lomonosov Moscow State University

Email: ildamirov@yandex.ru
俄罗斯联邦, Moscow, 119991

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2. Fig. 1. XRD spectra of Ru3d levels on the surface of the initial film with natural ruthenium oxide layer (1) and after its purification by argon ion beam bombardment (2).

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3. Fig. 2. XRD spectra of Ru3d level of pure Ru surface (1) and after exposure to O2 + 5% Kr plasma at ion energy ~40 eV for 360 s (2).

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4. Fig. 3. XRD spectra of Ru3d levels of Ru film surface treated in O2 + 5% Kr plasma at 20 eV energy for 120 (1) and 480 s (2).

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5. Fig. 4. XRD spectra of Ru3d levels of the Ru film surface treated in O2 + 5% Kr plasma for 240 c at energies of 150 (1), 100 (2) and 60 eV (3).

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6. Fig. 5. Dependence of oxygen content in the film (1) and Ru etching rate in O2 + 5% Ar (2) and O2 + 5% Kr (3) plasma on the energy of bombarding ions.

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7. Fig. 6. SEM image of Ru film surface after etching in O2 + 5% Kr plasma at Ucm = 130 eV for 240 s (a) and 30 eV for 360 s (b).

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