Peculiarities of Physical Properties of Film Structures Based on Tungsten Nanofilms with Various Phase Composition

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Abstract

The electrophysical properties of magnetron sputtered W thin films were studied depending on their thicknesses, substrate materials, phase compositions and structures. The results obtained indicated that W films were polycrystalline and contained two crystalline phases. Magneto-optical isotropy of Co thin films deposited on W was also observed. Dependencies of the resistivity on the W film thickness and substrate material was investigated experimentally and theoretically, which indicated the dominant contribution of charge carrier transport processes through crystallite boundaries.

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About the authors

A. V. Prokaznikov

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Author for correspondence.
Email: prokaznikov@mail.ru
Russian Federation, Yaroslavl, 150067

R. V. Selyukov

Yaroslavl Branch of the Valiev Institute of Physics and Technology of the RAS

Email: prokaznikov@mail.ru
Russian Federation, Yaroslavl, 150067

V. A. Paporkov

Demidov Yaroslavl State University

Email: prokaznikov@mail.ru
Russian Federation, Yaroslavl, 150003

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2. Fig. 1. Diffractograms of samples with 10 (a), 20 (b), 30 nm (c) thick W films deposited on glass (1), Si (2), SiO2/Si (3).

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3. Fig. 2. Diffractograms of samples with 30 nm thick W films deposited on SiO2/Si at 573 (1) and 773 K (2). Measurement speed of 1 (a) and 0.125 deg/min (b).

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4. Fig. 3. SEM images of W films with thicknesses of 10 (a, b), 20 (c, d), 30 nm (e, f) deposited on Si (a, c, e) and on SiO2/Si (b, d, f).

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5. Fig. 4. SEM images of a 20 nm thick W film on SiO2/Si (a) and a 30 nm thick W film on Si (b) obtained at an electron beam incidence angle of 70°.

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6. Fig. 5. Magneto-optical equatorial Kerr effect (δ) in the Co (6 nm)/W/SiO2/Si system for different tungsten film thicknesses: a - 10; b - 20; c - 30 nm.

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7. Fig. 6. Resistivity ρ of W films as a function of their thickness t for different substrates: 1 - SiO2/Si; 2 - Si; 3 - glass; 4, 5 - 30 nm thick film deposited on SiO2/Si at 573 and 773 K, respectively.

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